Special Papers
Sputtering Technology of Si Films for Low-Temperature
Poly-Si TFTs
Tolis VoutsasHirohiko NishikiMike Atkinson
John HartzellYukihiko Nakata
Abstract
In this paper we discuss the development of sputter-Si technology for
application in the area of poly-Si TFT Liquid Crystal Displays. We present the
motivation behind this development and the state-of-the-art in materials and
devices, based on PVD-Si precursor material. The Si-sputtering process is
analyzed and data are presented on the quality of as-sputtered and post-annealed
Si-films. The current drawbacks of Si sputtering are discussed, especially with
respect to particles, film contamination and equipment availability. Based on
the available data, strategies are presented to overcome these problems. PVD-Si
technology has come a long way and has become a viable candidate as a
Si-deposition method for next generation of poly-Si based applications. This
technique is expected to play an even more important role, as the p-Si TFT-LCD
industry moves to ultra-low temperature processing and, in parallel, the need
increases for process cost reductions.